Capacitor with volumetrically efficient hermetic packaging

ABSTRACT

An improved method of forming a capacitor, and capacitor formed thereby, is described. The method comprises forming an anode with an anode lead extending therefrom, forming a dielectric on the anode, forming a solid cathode layer on the dielectric and forming a hermetic encasement on the capacitor wherein the hermetic encasement comprises a conformal non-conductive layer.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application claims priority to pending U.S. ProvisionalPatent Application No. 62/157,668 filed May 6, 2015 which hisincorporated herein by reference.

BACKGROUND

The present invention is related to an improved method of packaging asolid electrolyte capacitor and an improved capacitor formed thereby.More specifically, the present invention is related to improving thevolumetric efficiency of a hermetically sealed capacitor by conformalhermetic elements.

Significant efforts are focused on increasing the volumetric efficiencyof solid electrolytic capacitors. The volumetric efficiency of anelectrolytic capacitor is typically defined as the ratio of the activecapacitor volume to the volume of the entire encapsulated capacitorpackage. The anode lead wire typically extends axially from the anode toa lead frame and ultimately to an external termination. The wire, andconnections thereto, occupy a significant non-contributory volume insidethe capacitor package which is difficult to eliminate without creatingother issues such as close approach of anodic and cathodic components ofthe capacitor.

U.S. Pat. No. 8,576,544, which is incorporated by reference, describes amethod for increasing volumetric efficiency. The method involves the useof a ceramic housing. The ceramic housing itself leads to significantdecrease in volumetric efficiency as the ceramic housing provides nocapacitance yet does occupy a significant volume. Other prior artmethods of hermetically sealing solid electrolytic capacitors involveplacing capacitive elements inside one part of a preformed hermeticpackage such as a can, housing, sleeve, or flat substrate, andhermetically closing the package by attaching a preformed lid, seal,top, or housing. These methods have inherently low volumetricefficiency.

U.S. Pat. No. 3,343,047, which is incorporate herein by reference, issomewhat beneficial yet the entirety of the capacitor body is conductivewhich leads to mounting issues. Encasing the capacitor in polymericresin is typically done yet this decreases volumetric efficiency as thepolymeric resin occupies additional space without contribution tocapacitance.

In spite of the ongoing efforts there is still a need for improvementsin hermetically sealed capacitors.

SUMMARY OF THE INVENTION

It is an object of the invention to provide a solid hermetically encasedelectrolytic capacitor with high volumetric efficiency.

A particular feature of the instant invention is the ability tomanufacture the solid hermetically encased electrolytic capacitorwithout significant alterations to the manufacturing process.

These, and other advantages, as will be realized, are provided in amethod of forming a capacitor. The method comprises forming an anodewith an anode lead extending therefrom, forming a dielectric on theanode, forming a solid cathode layer on the dielectric and forming ahermetic encasement on the capacitor wherein the hermetic encasementcomprises a conformal non-conductive layer.

Yet another embodiment is provided in a method of forming a hermeticallyencased capacitor. The method comprises forming an anode with an anodewire extending therefrom, forming a dielectric on the anode, insertingthe anode wire through a cap, hermetically sealing the anode wire to thecap, forming a solid cathode layer on at least a portion of thedielectric and forming a conformal metal coating wherein the conformalmetal coating is hermetically sealed to the cap.

Yet another embodiment is provided in a capacitor comprising an anodewith an anode lead extending therefrom. A dielectric is on the anode anda solid cathode layer is on the dielectric. A hermetic encasement is onthe capacitor wherein the hermetic encasement comprises a conformalnon-conductive layer.

Yet another embodiment is provided in a hermetically encased capacitor.The capacitor comprises an anode with an anode wire extending therefromwherein the anode wire extends through a cap and the anode wire ishermetically sealed to the cap. A dielectric is on the anode. A solidcathode layer is on at least a portion of the dielectric. A conformalmetal coating is hermetically sealed to said cap.

BRIEF DESCRIPTION OF THE FIGURES

FIG. 1 is a cross-sectional schematic side view of an embodiment of theinvention.

FIG. 2 is a cross-sectional schematic side view of an embodiment of theinvention.

FIG. 3 is a cross-sectional schematic side view of an embodiment of theinvention.

FIG. 4 is a cross-sectional schematic side view of an embodiment of theinvention.

FIG. 5 is a cross-sectional schematic side view of an embodiment of theinvention.

FIG. 6 is a cross-sectional schematic side view of an embodiment of theinvention.

FIG. 7 is a cross-sectional schematic side view of an embodiment of theinvention.

FIG. 8 is a side partial schematic view of an embodiment of theinvention.

FIG. 9 is a side partial schematic view of an embodiment of theinvention.

FIG. 10 is a side partial cross-sectional side view of an embodiment ofthe invention.

FIG. 11 is a top partial top view of an embodiment of the invention.

FIG. 12 is a side partial cross-sectional side view of an embodiment ofthe invention.

DETAILED DESCRIPTION

The present application is related to a hermetically encased capacitor,and method of making the hermetically encased capacitor, wherein thevolumetric efficiency is improved through the use of conformal hermeticcoatings with electrical isolation of the anode and cathode.

For the purposes of the instant invention conformal, conformally, orderivatives thereof refers to a layer which generally follows thecontour of the underlying layer. Examples of conformal coatings includecoatings, which are allowed to flow to a certain extent, and depositedlayers which deposit in a conforming manner to the layer deposited on.

For the purposes of the present invention the terms encase, encased orderivatives thereof refers to layer which encloses or covers in a closefitting surround.

The construction and manufacture of solid electrolyte capacitors is welldocumented. In the construction of a solid electrolytic capacitor aconductor, and preferably a valve metal, serves as the anode. The valvemetal is preferably selected from the group consisting of Al, W, Ta, Nb,Ti, Zr and Hf or a conductive oxide thereof such as NbO. The anode bodycan be a porous pellet, formed by pressing and sintering a high puritypowder, or a foil which is etched to provide an increased anode surfacearea. An oxide of the valve metal is electrolytically formed to cover upto all of the surfaces of the anode and to serve as the preferreddielectric of the capacitor. A solid electrolyte at least partiallyencases the dielectric wherein the solid electrolyte and anode separatedby a dielectric form the capacitive couple.

The solid cathode electrolyte is typically chosen from a very limitedclass of materials, to include manganese dioxide or electricallyconductive organic materials, intrinsically conductive polymers, such aspolyaniline, polypyrol, polythiophene and their derivatives.Commercially available polyethylene dioxythiophene, and mixturesthereof, commercially available from Hareaus, are particularly preferredconductive polymers. The solid cathode electrolyte is applied so that itconformally covers all dielectric surfaces and is in direct intimatecontact with the dielectric with the understanding that the solidcathode electrolyte is not in direct electrical contact with the anode.In addition to the solid electrolyte, the cathodic layer of a solidelectrolyte capacitor typically comprises several layers external to theanode body to allow for subsequent connection to terminations or circuittraces. In the case of surface mount constructions these layerstypically include: a carbon layer; a cathode conductive layer which maybe a layer containing a highly conductive metal, typically silver, boundin a polymer or resin matrix; or an electroplated metal coating, and aconductive adhesive layer such as silver filled adhesive. The carboncontaining layer also functions to block metal from migrating into thesolid electrolyte. The layers including the solid cathode electrolyte,conductive adhesive and layers there between are referred tocollectively herein as the cathode layer which typically includesmultiple interlayers designed to allow adhesion on one face to thedielectric and on the other face to the cathode lead. A highlyconductive metal lead frame is often used as a cathode lead for negativetermination. The various layers connect the solid electrolyte to theoutside circuit and also serve to protect the dielectric fromthermo-mechanical damage that may occur during subsequent processing,board mounting, or customer use.

The method of forming metal containing cathode conductive layersincludes electroplating, electroless plating, sputter deposition, atomiclayer deposition, etc. A method of electroplating solid electrolyticcapacitor cathodes is described in U.S. Pat. No. 8,310,816, which isincorporated herein by reference. Electroplating can be done by reversebias.

The invention will be described with reference to the various figuresforming an integral, non-limiting, component of the disclosure.Throughout the various figures similar elements will be numberedaccordingly.

An embodiment of the invention will be described with reference to FIG.1 wherein an embodiment of the invention is illustrated incross-sectional schematic side view. The capacitor, generallyrepresented at 1, comprises an anode, 10, with an anode wire, 11,extending therefrom or attached thereto. A dielectric, 12, encases atleast a portion of the anode and may encompass the entire anode and aportion of the anode wire. A conformal conductive layer, 14, preferablycomprising at least one conductor selected from a conductive polymer andmanganese dioxide, encases at least a portion of the dielectric with theunderstanding that the conformal conductive layer is not in electricalcontact with the anode or anode wire. It is understood to those in theart that electrical connection of a metal lead or circuit trace to aconductive layer, particularly a conductive layer comprising conductivepolymer or manganese dioxide, is difficult and it has therefore becomecommon in the art to apply a conformal transition layer, 15, encasingthe conformal conductive layer wherein the transition layer comprisesconductive carbon. A conformal metal layer, 16, which functions as themetalized cathode coating, encases at least a portion of the conformaltransition layer and functions as an integral component of the hermeticencasement. A conformal non-conductive layer, 18, forms a conformallayer over at least that portion of the anode, and dielectric ifpresent, not encased by the conformal metal layer and forms a hermeticseal with the conformal metal layer and with the anode wire with theanode wire extending through the conformal non-conducting layer. It ispreferable that the conformal non-conductive layer encases at least aportion of the conformal metal layer. The conformal metal layer andconformal non-conductive layer are taken together to form a conformalhermetic encasement with a portion of the conformal hermetic seal beingconductive and a portion of the conformal hermetic encasement being anon-conductive wherein the hermetical encasement comprises a minimumnumber of junctions with one being a junction between the conformalmetal layer and conformal non-conductive layer and a second junctionbeing between the conformal non-conductive layer and anode wire. Acathode plating, 20, is preferably applied to a portion of the conformalmetal layer not encased with conformal non-conductive layer to form acathode termination. The cathode plating is preferably a solderablelayer suitable for attachment of the capacitor to a circuit trace orcathode lead. A conductive end cap, 22, in electrical contact with theanode wire provides an anode termination. Portions of the capacitorillustrated in FIG. 1 may be further encased in a non-conductive resinif desired.

An embodiment of the invention is illustrated in cross-sectionalschematic view in FIG. 2 wherein the anode, 10, anode wire, 11,dielectric, 12, conformal conductive layer, 14 and conformal transitionlayer, 15, are as described relative to FIG. 1. In FIG. 2 the conformalnon-conductive layer, 18, forms a cap with a hermetic seal between theedge of the conformal metal layer, 16, and the conformal non-conductivelayer, 18. The cathode plating, 20, and conductive end cap, 22, are asdescribed relative to FIG. 1. Portions of the capacitor illustrated inFIG. 2 may be further encased in a non-conductive resin if desired. Inthe embodiment illustrated in FIG. 2, the conformal non-conductive layeris preferably a ceramic blocking element co-sintered with the anodeduring anode sintering.

An embodiment of the invention is illustrated is cross-sectionalschematic view in FIG. 3. In FIG. 3, a cathode lead, 24, is inelectrical contact with the conformal metal layer, 16. An anode lead,26, is in electrical contact with the anode wire, 11. The entireassembly, except for a portion of the cathode lead and a portion of theanode lead, are encased in a non-conductive resin, 28. In FIG. 3, thehermetic encasement is represented by the conformal metal layer andconformal non-conductive layer hermetically sealed to each other.

An embodiment of the invention is illustrated in cross-sectionalschematic view in FIG. 4. In FIG. 4, a cathode lead, 24, is inelectrical contact with the conformal metal layer, 16, and an anodelead, 26, is in electrical contact with the anode wire, 11. A conformalnon-conductive layer, 18, encases the entirety of the cathode bodycomprising the anode, 10, dielectric, 12, conformal conductive layer,14, conformal transition layer, 15, and conformal metal layer, 16. Theconformal non-conductive layer also encases at least a portion of theanode wire, 11, as well as a portion of the cathode lead and a portionof the anode lead. A non-conductive resin, 28, preferable at leastpartially encases the conformal non-conductive layer wherein the cathodelead and anode lead extend through the non-conductive resin. In oneembodiment the cathode lead and anode lead are bent to a co-planarrelationship on a common face of the capacitor body to provide a surfacemount capacitor.

An embodiment of the invention is illustrated in cross-sectionalschematic view in FIG. 5. In FIG. 5, a capacitor body comprising theanode, 10, dielectric, 12, conformal conductive layer, 14, conformaltransition layer, 15 and conformal metal layer, 16, are discussed above.A cathode lead, 24, is in electrical contact with the conformal metallayer, 16, and an anode lead is in electrical contact with the anodewire, 11. A non-conductive resin, 28, encases the entire cathode body,the anode wire, and a portion of both the cathode lead and anode leadwith the cathode lead and anode lead extending through thenon-conductive resin. A conformal non-conductive layer, 18, encases theentire non-conductive resin with a portion of the cathode lead and anodelead extending through the conformal non-conductive layer andhermetically sealed to the conformal non-conductive layer therebyproviding a hermetic encasement.

An embodiment of the invention is illustrated in cross-sectionalschematic view in FIG. 6 wherein the anode wire, 11, and anode bodycomprising the anode, 10, dielectric, 12, conformal conductive layer,14, conformal transition layer, 15 and conformal metal layer, 16, are asdiscussed previously. A cathode lead, 24, is in electrical contact withthe conformal metal layer. A ceramic end cap, 30, is attached to theanode body by a, preferably non-conductive, hermetic seal, 32, betweenthe ceramic end cap and conformal metal layer. The anode wire, 11, iselectrically connected to the anode lead, 26. The hermetic seal isformed by the combination of the conformal metal coating, the ceramicend cap, the hermetic seal there between and the hermetic seal betweenthe ceramic end cap and anode wire thereby forming a hermeticencasement.

An embodiment of the invention is illustrated in cross-sectionalschematic view in FIG. 7 wherein the anode wire, 11, and anode bodycomprising the anode, 10, dielectric, 12, conformal conductive layer,14, conformal transition layer, 15 and conformal metal layer, 16, are asdiscussed previously. A cathode plating, 20, is applied to a portion ofthe conformal metal layer, 16, as a cathode termination. A ceramic endcap, 30, comprising metallized areas, 34, is welded to the conformalmetal layer and anode wire, 11, at the metallized areas. An anodeplating, 36, is in electrical contact with the anode wire therebyforming the anode termination. The hermetic encasement is provided bythe conformal metal coating, ceramic end cap, metallurgical bond betweenthe metallized area of the ceramic end cap and either a metallurgicalbond between a metallized area of the end cap and anode wire or ametallurgical bond between a metallized area of the end cap and theanode plating.

An embodiment of the invention is illustrated in cross-sectionalschematic view in FIG. 8 wherein the anode body, 38, comprising acathode plating, 20, and anode plating, 36, are as described relative toFIG. 7. In FIG. 8, an insulator, 40, is provided on the mounting surfaceto eliminate any electrical short which can occur from solder being inelectrical contact, or close proximity, to both the anode and cathodeleads.

An embodiment of the invention is illustrated in cross-sectionalschematic partial view in FIG. 9. In FIG. 9, an end cap, 42, preferablya ceramic end cap, comprises a plated via, 44, through which the anodewire, 11, extends for electrical connection therewith. The electricalconnection is preferably a weld as a weld is a hermetic seal.

An embodiment of the invention is illustrated in schematic partialcross-sectional side view in FIG. 10. In FIG. 10, the capacitor body,38, is as described above. A sleeve cap, 46, at least partially receivesthe capacitor body therein and at least partially encases the capacitorbody. The sleeve cap comprises body metallization areas, 48, which areattached to the conformal metal layer of the capacitor body such as by aweld or solder joint, 50. A wire metallization area, 52, which may be aplated via, is attached to the anode wire, 11, by a joint, 54, such as aweld or solder joint.

An embodiment of the invention is illustrated in schematic partial topview in FIG. 11. In FIG. 11, the capacitor body, 38, and anode wire, 11,are as discussed above. An annular seal, 56, comprising a metal shell,58, and core, 60, encases the anode wire. The core is preferably a glassand a hermetic seal is formed between the core of the annular seal andanode wire by annealing, or heating, the core to form a conformalnon-conductive layer on the anode wire. A conformal conductive layer isthen formed over the body and is in a sealing relationship with theshell of the annular seal. The ring can be slipped over the anode wireand heat treated to fuse the glass to the anode wire. The part can thenbe metal plated, such as with copper, thereby joining the copper ring tothe plating. This will form a hermetic encasement including a hermeticseal to wire with the glass, the glass to the copper ring and the copperring to the copper over plating.

An embodiment of the invention is illustrated in partial cross-sectionalside view in FIG. 12. In FIG. 12, the anode body, 38, has an anode wire,11, extending therefrom. An annular seal, 56, forms a non-conductinghermetic seal, 68, with the anode wire and the conducting shell, 70, onthe non-conducting core. A conforming conducting layer, 62, is formed onthe capacitor body and forms a hermetic seal with the shell, 58. Acathode lead, 64, is electrically connected to the conforming conductinglayer. An anode lead, 66, is electrically connected to the anode wire.An optional but preferred insulator, 68, preferably encases at least aportion of the capacitor body and a portion of the cathode lead andanode lead.

It is understood by those skilled in the art that the anode wire may bea solid wire inserted into the anode during the process of forming theanode by pressing and sintering a powder. Alternatively the anode wiremay be a wire welded or otherwise connected to the exterior of theanode. Another possibility familiar to those skilled in the art is ananode lead that is an extension of the anode itself.

In one embodiment the anode is a foil, preferably an aluminum foil wherethat portion of the aluminum foil covered with the conformal conductivelayer, which functions as the cathode, can be considered the anode andthe portion of the aluminum foil not covered with the cathode can beconsidered the anode wire also referred to as an anode lead. On theexterior of the anode is a dielectric.

In one embodiment the conformal transition layer comprises a carboncontaining layer which allows for adhesion of the subsequent metal layerto the conformal conductive layer and blocks migration of metal to thecathode.

The conformal metal coating is applied over the conformal transitionlayer wherein the conformal metal coating is a component of the hermeticencasement. In one embodiment the conformal metal coating comprises atleast 50% of the surface area of the hermetic encasement.

The conformal layers may be applied directly by methods includingdipping and thin film deposition methods such as electroplating,electroless plating, sputtering, and atomic layer deposition. In someembodiments the conformal hermetic coating may be conductive and form anintegral part of the cathode. In other embodiments the conformalhermetic coating is nonconductive. Alternatively, the conformal hermeticcoating can be applied to a material encapsulating the capacitiveelement leaving a portion of the anode and cathode exposed to serve asterminations. The conformal hermetic coating can be applied by methodssuch as flame spray or atomic layer deposition of a nonconductiveceramic. The material may be a low temperature glass.

Portions of the hermetic seal can be applied by methods including flamespraying of a nonconductive hermetic material such as ceramic;application of a low firing temperature glass or atomic layer depositionof a ceramic. The nonconductive hermetic isolation element may beapplied before or after formation of the dielectric, the cathode oradditional conductive coatings. One method of forming a conformalnon-conductive hermetic element is by thermal spray, flame spraying orplasma spraying. Thermal spraying techniques are coating processes inwhich melted, or heated, materials are sprayed onto a surface. The“feedstock”, or coating precursor, is heated preferably by electricalenergy, such as by plasma or arc, or by chemical means, such as by acombustion flame. Thermal spraying can provide thick coatings, such asan approximate thickness range of 20 micrometers to several mm dependingon the process and feedstock, over a large area at a high depositionrate as compared to other coating processes such as electroplating,physical vapor deposition or chemical vapor deposition. Coatingmaterials available for thermal spraying include metals, alloys,ceramics, plastics and composites. The coating materials are fed inpowder form or wire form, heated to a molten or semi-molten state andaccelerated towards the substrate in the form of micrometer-sizeparticles. Combustion or electrical arc discharge is usually used as thesource of energy for thermal spraying. Resulting coatings are made bythe accumulation of numerous sprayed particles. The surface may not heatup significantly, allowing the coating of flammable substances.

Another method of forming a non-conductive hermetic element is by AtomicLayer Deposition (ALD). ALD is a thin film deposition method in which afilm is grown on a substrate by exposing its surface to alternategaseous species, typically referred to as precursors. In contrast tochemical vapor deposition, the precursors are never presentsimultaneously in the reactor, but they are inserted as a series ofsequential, non-overlapping pulses. In each of these pulses theprecursor molecules react with the surface in a self-limiting way sothat the reaction terminates once all the reactive sites on the surfaceare consumed. Consequently, the maximum amount of material deposited onthe surface after a single exposure to all of the precursors, aso-called ALD cycle, is determined by the nature of theprecursor-surface interaction. By varying the number of cycles it ispossible to grow materials uniformly and with high precision onarbitrarily complex and large substrates.

Another method of forming a conformal non-conductive hermetic element isby low melting temperature or low temperature firable glass sealing.This technique utilizes low melting glass, also referred to in the artas glass solder, and therefore provides various advantages including aviscosity of the glass which decreases with an increase of temperature.The viscous flow of the glass has the advantage of compensating andplanarizing surface irregularities and glass solder is thereforeconvenient for bonding surfaces with a high roughness due to plasmaetching or deposition. A low viscosity promotes hermetically sealedencapsulation of structures based on a better adaption of the structuredshapes. A particularly preferred glass solder has a melting point of220-300° C. The low-melting glass can be used with metals, ceramics andresins, as well as melted with a variety of heat sources such as hotplates, infra-red lamps, lasers, etc. A suitable low melting glass isavailable from Hitachi Chemicals as an environmentally-compatiblelow-melting vanadate glass referred to as Vaneetect.

Hermeticity, or a hermetic seal, is defined herein as having a leak rateof no more than 1×10⁻³ atm·cm³/second, more preferably no more than5×10⁻³ atm·cm³/second of helium, even more preferably no more than5×10⁻⁷ atm·cm³/second of helium and most preferably no more than 1×10⁻⁸atm·cm³/second of helium.

The invention has been described with particular emphasis on thepreferred embodiments. One of skill in the art would realize additionalembodiments, alterations, and advances which, though not enumerated, arewithin the invention as set forth more specifically in the claimsappended hereto

1. A method of forming a capacitor comprising: forming an anode with ananode lead extending therefrom; forming a dielectric on said anode;forming a solid cathode layer on said dielectric; and forming a hermeticencasement on said capacitor wherein said hermetic encasement comprisesa conformal non-conductive layer.
 2. The method of forming a capacitorof claim 1 wherein said hermetic encasement further comprises aconformal metal coating hermetically sealed to said conformalnon-conductive layer.
 3. The method of forming a capacitor of claim 2wherein said conformal metal coating is formed by a method selected fromthe group consisting of electroplating, electroless plating, sputteringand atomic layer deposition.
 4. The method of forming a capacitor ofclaim 2 wherein said conformal metal coating comprises at least 50% of asurface area of said hermetic encasement.
 5. The method of forming acapacitor of claim 1 wherein said solid cathode layer comprises at leastone of a conductive polymer layer, a carbon containing layer and a metalcontaining layer.
 6. The method of forming a capacitor of claim 1further comprising an anode termination electrically connected to saidanode wire.
 7. The method of forming a capacitor of claim 6 wherein saidconforming non-conductive layer is on said anode termination or saidanode wire.
 8. The method of forming a capacitor of claim 1 furthercomprising electrically connecting a cathode termination to said solidcathode layer.
 9. The method of forming a capacitor of claim 8 whereinsaid cathode termination is electrically connected to a conformal metalcoating hermetically sealed to said conformal non-conductive layer. 10.The method of forming a capacitor of claim 1 wherein said conformalnon-conductive layer is on said dielectric.
 11. The method of forming acapacitor of claim 1 wherein said conformal non-conductive hermeticlayer is on said anode wire.
 12. The method of forming a capacitor ofclaim 1 wherein said hermetic encasement has a leak rate no more than1×10⁻³ atm·cm³/second.
 13. The method of forming a capacitor of claim 12wherein said hermetic encasement has a leak rate no more than 1×10⁻⁸atm·cm³/second of helium.
 14. The method of forming a capacitor of claim1 wherein said conformal non-conductive layer is formed by a methodselected from the group consisting of coating by flame spray, coating byatomic layer deposition and formation of a low temperature fired glasscoating.
 15. The method of forming a capacitor of claim 1 furthercomprising a non-conductive resin encasing a portion of said capacitor.16. The method of forming a capacitor of claim 15 wherein saidconforming non-conducting layer is on said non-conductive resin.
 17. Themethod of forming a capacitor of claim 1 wherein said conformalnon-conductive layer is a ceramic coating.
 18. The method of forming acapacitor of claim 17 further comprising co-sintered said ceramiccoating with said anode.
 19. The method of forming a capacitor of claim17 wherein said anode wire extends through said ceramic coating.
 20. Themethod of forming a capacitor of claim 19 wherein said anode wire ishermetically sealed to said ceramic coating.
 21. The method of forming acapacitor of claim 1 wherein said forming of said dielectric is prior tosaid forming of said conformal non-conductive layer.
 22. A method offorming a hermetically encased capacitor comprising: forming an anodewith an anode wire extending therefrom; forming a dielectric on saidanode; inserting said anode wire through a cap; hermetically sealingsaid anode wire to said cap; forming a solid cathode layer on at least aportion of said dielectric; and forming a conformal metal coatingwherein said conformal metal coating is hermetically sealed to said cap.23. The method of forming a hermetically encased capacitor of claim 22wherein said cap comprises a core and a shell further comprising:hermetically sealing said core to said anode wire; and forming aconformal metal coating wherein said conformal metal coating ishermetically sealed to said shell.
 24. The method of forming a capacitorof claim 23 wherein said core is non-conductive and said shell isconductive.
 25. The method of forming a capacitor claim 23 wherein saidcore is a glass.
 26. The method of forming a capacitor claim 22 whereinsaid solid cathode layer comprises at least one of a conductive polymerlayer, a carbon containing layer and a metal containing layer.
 27. Themethod of forming a capacitor claim 22 wherein said cap comprises ametallized portion.
 28. The method of forming a capacitor claim 27wherein said metallized portion is hermetically sealed to said conformalmetal coating.
 29. The method of forming a capacitor claim 27 whereinsaid metallized portion is hermetically sealed to said anode wire. 30.The method of forming a capacitor claim 22 further comprising anon-conductive resin encasing a portion of said capacitor. 31-57.(canceled)